| 1. | ( 3 ) influence of laser power density on atomic emission intensity is investigated
( 3 )研究了激光的辐射功率密度对libs信号强度的影响。 |
| 2. | After obtaining optimized laser frequency 5hz accepted - pulse - times 10 / second by experiments , laser power density increased little by little is focused on study
实验在优化频率为5hz ，受光次数10次秒时，重点研究了激光能量密度由小到大对晶化性能的影响。 |
| 3. | I find that the crystallization performance is the best at laser power density 300mj / cm2 . it means crystallization degree is the best , grains are the most uniformity and film stress is the least
实验发现在能量密度为300mj cm ~ 2时晶化性能较好，即晶化度最高，晶粒最大且均匀，薄膜应力最小。 |
| 4. | Experimental study on that 1064nm 、 1319nm cw laser irradiate the visible light linear array ccd respectively . with the data of experiment , the thresholds of laser power density that make the ccd saturation , crosstalk and thermal saturation were calculated
通过实验获得了1064nm连续激光使ccd成像系统光饱和、串扰、热饱和的功率密度阈值;分析了线阵ccd的横向光饱和效应;初步证实了可见光ccd对1319nm激光的不响应特性。 |
| 5. | The detectors " major response to the irradiation of in - band light is optical effect , while thermal effect can be seen when the incident laser power density is somewhat higher ; when irradiated by off - band light , the detectors " major response is thermal effect
实验发现，探测器对波段内激光的响应主要表现为光效应，当辐照激光的功率密度比较大的时候，还会有热效应出现；而探测器对波段外激光的响应特性则主要表现为热效应。 |
| 6. | In detail , the major work that have been done are as follows : l . irradiated by the 1 . 06 m 1 . 319 m 3 . 8 m laser respectively , when the incident laser power density is between the saturation threshold and the damage threshold , the vibrating phenomenon and the zero - output phenomenon can be seen in the pv - type detectors " response curve
论文的主要工作有： 1分别用波长为1 . 06 m 、 1 . 319 m 、 3 . 8 m的激光辐照光伏型( pv ) hgcdte探测器，实验发现，当辐照激光的功率密度大于其饱和阈值而小于其破坏阈值时，探测器的输出存在“振荡现象”和“零压输出现象” 。 |
| 7. | Because p - si is of more special characteristics , comparing to a - si and c - si , firstly , i set forth electrical features of p - si film and acknowledge profoundly electrical mechanism of p - si film . then three parameters of laser annealing , including laser frequency - , accepted - pulse - times and laser power density are studied how to influence crystallization of p - si
因为多晶硅和非晶硅及晶体硅相比具有更独特的特点，所以我们先阐述了多晶硅薄膜的电学特点，对多晶硅的导电机理有了深刻的了解；然后研究了激光频率、受光次数和激光功率密度三个参数对晶化多晶硅的影响。 |
| 8. | The relationships between the laser performance index , such as laser power densities , pulse energy and energy densities , and the diameter of holes have been set up , and a experience formula between the energy density and the diameter of holes has been established by the regression method , based on the experiment results
在此基础上，本文对微喷带激光打孔机的性能进行了试验研究，得到了激光功率密度、激光脉冲能量和激光能量密度对打孔孔径的影响关系。通过数据回归的方法，建立了激光能量密度与孔径之间的半经验公式。 |
| 9. | Experimental study on that 532nm 、 1064nm 、 1319nm 5khz frequency pw laser irradiate the ccd respectively . with the data of experiment , the thresholds of laser power density that induce ccd saturation , crosstalk and irreparability damage were calculated . the phenomenon that 532nm 5khz laser can induce part of ccd functional damage but absolutely damage was found
根据实验数据计算了532nm 、 1064nm高重频脉冲激光使ccd出现饱和、串扰以及被破坏的功率密度阈值;实验发现一定功率密度的高重频532nm脉冲激光可以使ccd局部损伤而不致整体破坏;实验进一步证实了1319nm激光不能使可见光ccd产生响应。 |
